Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers

An interesting device design including a zirconium oxide (ZrO 2 ) current blocking layer (CBL) and ZrO surface passivation (SPL) is employed to manufacture GaN/InGaN light-emitting diode (LED). Based on the inherently good performance of , spreading effect undesired leakage are efficiently enhanced suppressed, respectively. Energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), scanning electron (SEM), transmission (TEM) used study relevant properties. It found that by series calibration, 50 nm proper thickness CBL SPL. The peak emission wavelength proposed LEDs around 452 nm. Experimentally, at operating condition 110 A cm ?2 Device L3 with nm-thick SPL demonstrates improvements 66.1% in light output power (LOP) 64.5% wall plug efficiency (WPE) as compared traditional L1 without specific design. Furthermore, presents notable enhancement mapping image comparison LED. So, which incorporates SPL, beneficial for manufacturing LEDs.